IR (905 nm) Epi-Stack Pulsed Lasers for Military & Industrial Applications
The Series 2675 Epi-Stack is an extremely high power, 905 nm pulsed diode laser capable of 75 W peak output from a 200 x 10 μm emitting aperture. Each laser is a single, monolithic chip that incorporates three high efficiency, epitaxial stacked emitters. The lasers provide high power from a small emitter area, providing simplified system design and lower overall cost in a rugged, hermetically sealed 5.6 mm package.
Defense applications include LiDAR, range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, adaptive cruise control, geoscanning-mapping and cellometers. 400μm core fiber coupled version of these devises is also available on request.
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Intense Series 2675 Datasheet (PDF)
Specifications @ 25°C, 100nsec, 2KHz
Specs | Symbol | Model 2675 |
---|---|---|
Output Power | (W) | 75 |
Source Size | (µm) | 200 x 10 |
Operating Current | (A) | 30 |
Threshold Current | (A) | 0.75 |
Typical Wavelength | (nm) | 905 ± 10 |
Spectral Width | (nm) | 7 |
Slope Efficiency | (W/A) | 2.5 |
Max Duty Cycle | (%) | 0.1 |
Pulse Width | ns | < 100 |
Beam Divergence | deg (FWHM) | 11 x 25 |
Reverse Voltage | (V) | 3 |
Typical Packages | TO56 (other free space and fiber coupled packages available on request) |
Vertical Stacks Specifications @ 25°C, 100nsec, 2KHz
Specs | Symbol | Model 2675-2S | Model 2675-2S |
---|---|---|---|
Output Power | (W) | 150 | 225 |
Source Size | (µm) | 200 x .160 | 200 x 310 |
Operating Current | (A) | 30 | 30 |
Threshold Current | (A) | 0.75 | 0.75 |
Max Duty Cycle | (%) | 0.05 | 0.01 |
