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Intense: Innovative laser diode solutions




IR (905 nm) Epi-Stack Pulsed Lasers for Military and Industrial Applications

The Series 2675 Epi-Stack is an extremely high power, 905 nm pulsed diode laser capable of 75 W peak output from a 200 x 10 μm emitting aperture. Each laser is a single, monolithic chip that incorporates three high efficiency, epitaxial stacked emitters. The lasers provide high power from a small emitter area, providing simplified system design and lower overall cost in a rugged, hermetically sealed 5.6 mm package.

Defense applications include LiDAR, range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, adaptive cruise control, geoscanning- mapping, and ceilometers.


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Specifications @ 25°C, 100nsec, 2KHz

2675
Output Power(W) 75
Source Size(µm) 200 x 10
Operating Current(A) 30
Threshold Current(A) 0.75
Typical Wavelength(nm) 905 ± 10
Spectral Width(nm) 7
Slope Efficiency(W/A) 2.5
Max Duty Cycle(%) 0.1
Wavelength Tolerance(nm)±20
Pulse Widthns =< 100
Beam Divergence(deg. FWHM) 25x11
Typical PackagesTO56 (others on request)



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Capable of 75 W, the Intense Series 2675 are extremely high power, 905 nm pulsed diode lasers