The Series 2675 Epi-Stack is an extremely high power, 905 nm pulsed diode laser capable of 75 W peak output from a 200 x 10 μm emitting aperture. Each laser is a single, monolithic chip that incorporates three high efficiency, epitaxial stacked emitters. The lasers provide high power from a small emitter area, providing simplified system design and lower overall cost in a rugged, hermetically sealed 5.6 mm package.

Defense applications include LiDAR, range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, adaptive cruise control, geoscanning-mapping and cellometers. 400μm core fiber coupled version of these devises is also available on request.

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Specifications @ 25°C, 100nsec, 2KHz

		2675
Output Power	(W)	50
Source Size	(µm)	200μm x .22NA
Operating Current	(A)	30
Threshold Current	(A)	0.75
Typical Wavelength	(nm)	905 ± 10
Spectral Width	(nm)	7
Slope Efficiency	(W/A)	2.5
Max Duty Cycle	(%)	0.1
Pulse Width	ns	=< 100
Beam Divergence	(deg. FWHM)	25x11
Reverse Voltage	(V)	3
Typical Packages		TO56 (other free space and fiber coupled packages available on request)

Vertical Stacks Specifications @ 25°C, 100nsec, 2KHz

Series 2675-XS		2675-2S	2675-3S
Output Power	(W)	150	225
Source Size	(µm)	200 x .160	200 x 310
Operating Current	(A)	30	30
Threshold Current	(A)	0.75	0.75
Max Duty Cycle	(%)	0.05	0.01

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Capable of 75 W, the Intense Series 2675 are extremely high power, 905 nm pulsed diode lasers

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