Site Map | Search
Intense: Innovative laser diode solutions




IR (905 nm) Epi-Stack Pulsed Lasers for Military and Industrial Applications

The Series 2675 Epi-Stack is an extremely high power, 905 nm pulsed diode laser capable of 75 W peak output from a 200 x 10 μm emitting aperture. Each laser is a single, monolithic chip that incorporates three high efficiency, epitaxial stacked emitters. The lasers provide high power from a small emitter area, providing simplified system design and lower overall cost in a rugged, hermetically sealed 5.6 mm package.

Defense applications include LiDAR, range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, adaptive cruise control, geoscanning-mapping and cellometers. 400μm core fiber coupled version of these devises is also available on request.


To talk to us about Intense products, please complete this short form.  All fields are required:

Contact Intense:
Name: Company:
Email: Telephone:

Specifications @ 25°C, 100nsec, 2KHz

2675
Output Power(W) 50
Source Size(µm) 200μm x .22NA
Operating Current(A) 30
Threshold Current(A) 0.75
Typical Wavelength(nm) 905 ± 10
Spectral Width(nm) 7
Slope Efficiency(W/A) 2.5
Max Duty Cycle(%) 0.1
Pulse Widthns =< 100
Beam Divergence(deg. FWHM) 25x11
Reverse Voltage(V) 3
Typical PackagesTO56 (other free space and fiber coupled packages available on request)

Vertical Stacks Specifications @ 25°C, 100nsec, 2KHz

Series 2675-XS 2675-2S 2675-3S
Output Power(W) 150 225
Source Size(µm) 200 x .160 200 x 310
Operating Current(A) 30 30
Threshold Current(A) 0.75 0.75
Max Duty Cycle(%) 0.05 0.01


[back] | [top of page]





Capable of 75 W, the Intense Series 2675 are extremely high power, 905 nm pulsed diode lasers