IR (905 nm) Epi-Stack Pulsed Lasers for Military & Industrial Applications

The Series 2675 Epi-Stack is an extremely high power, 905 nm pulsed diode laser capable of 75 W peak output from a 200 x 10 μm emitting aperture. Each laser is a single, monolithic chip that incorporates three high efficiency, epitaxial stacked emitters. The lasers provide high power from a small emitter area, providing simplified system design and lower overall cost in a rugged, hermetically sealed 5.6 mm package.

Defense applications include LiDAR, range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, adaptive cruise control, geoscanning-mapping and cellometers. 400μm core fiber coupled version of these devises is also available on request.

 

  • Wafer

  • Fabrication

  • Packaging

  • Production

  • Test & Characterization

Orange notes optimal applications

Intense Series 2675 Datasheet (PDF)

Specifications @ 25°C, 100nsec, 2KHz

SpecsSymbolModel 2675
Output Power(W)75
Source Size (µm)200 x 10
Operating Current (A)30
Threshold Current (A)0.75
Typical Wavelength (nm)905 ± 10
Spectral Width (nm)7
Slope Efficiency (W/A)2.5
Max Duty Cycle(%)0.1

Pulse Widthns< 100
Beam Divergence deg (FWHM)11 x 25
Reverse Voltage(V)3
Typical PackagesTO56 (other free space and fiber coupled packages available on request)

Vertical Stacks Specifications @ 25°C, 100nsec, 2KHz

SpecsSymbolModel 2675-2SModel 2675-2S
Output Power(W)150225
Source Size (µm)200 x .160200 x 310
Operating Current (A)3030
Threshold Current (A)0.750.75
Max Duty Cycle(%)0.050.01
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