IR (905 nm) Epi-Stack Pulsed Lasers for Military & Industrial Applications

The Series 2675 Epi-Stack is an extremely high power, 905 nm pulsed diode laser capable of 75 W peak output from a 200 x 10 μm emitting aperture. Each laser is a single, monolithic chip that incorporates three high efficiency, epitaxial stacked emitters. The lasers provide high power from a small emitter area, providing simplified system design and lower overall cost in a rugged, hermetically sealed 5.6 mm package.

Defense applications include LiDAR, range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, illumination, security-detection, and ordinance fusing-ignition. Industrial applications include commercial range finding, adaptive cruise control, geoscanning-mapping and cellometers. 400μm core fiber coupled version of these devises is also available on request.

The 1550 nm laser may be overdriven at narrower pulse widths using Pod = Po * (200/Pwd) 1/2. Standard packages include 5.6MM, 9MM, TO18 coaxial, and TO5 twin lead. Options include fiber pigtails. R0 detectors are available in some packages for range finding applications. Applications for these diode lasers include hand held rangefinders, laser speed detectors, ceilometers, weapons simulation, and proximity fuses.

  • Wafer

  • Fabrication

  • Packaging

  • Production

  • Test & Characterization

Orange notes optimal applications

Intense Series 2675 Datasheet (PDF)

Specifications @ 25°C, 100nsec, 2KHz

SpecsSymbolModel 2675
Output Power(W)50
Source Size (µm)200μm x .22NA
Operating Current (A)30
Threshold Current (A)0.75
Typical Wavelength (nm)905 ± 10
Spectral Width (nm)7
Slope Efficiency (W/A)2.5
Max Duty Cycle(%)0.1

Pulse Widthns< 100
Beam Divergence (deg. FWHM)25x11
Reverse Voltage(V)3
Typical PackagesTO56 (other free space and fiber coupled packages available on request)

Vertical Stacks Specifications @ 25°C, 100nsec, 2KHz

SpecsSymbolModel 2675-2SModel 2675-2S
Output Power(W)150225
Source Size (µm)200 x .160200 x 310
Operating Current (A)3030
Threshold Current (A)0.750.75
Max Duty Cycle(%)0.050.01
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